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Study of Radiation-Induced Defects in p-Type Si(1−x)Ge(x) Diodes before and after Annealing
In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si(1−x)Ge(x))-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The p-type SiGe alloys with sligh...
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| Publicado en: | Materials (Basel) |
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| Autores principales: | , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7763288/ https://ncbi.nlm.nih.gov/pubmed/33322844 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13245684 |
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