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Study of Charge Carrier Transport in GaN Sensors
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current tra...
Gardado en:
| Publicado en: | Materials (Basel) |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5502986/ https://ncbi.nlm.nih.gov/pubmed/28773418 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9040293 |
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