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Study of Charge Carrier Transport in GaN Sensors
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current tra...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5502986/ https://ncbi.nlm.nih.gov/pubmed/28773418 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9040293 |
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