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Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth*
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW cores that were not subject to self-shadowing eff...
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| Publicado no: | Proc SPIE Int Soc Opt Eng |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7745221/ https://ncbi.nlm.nih.gov/pubmed/33343056 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1117/12.2322832 |
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