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UV LEDs Based on p-i-n Core-Shell AlGaN/GaN Nanowire Heterostructures Grown by N-polar Selective Area Epitaxy
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm with ~5x higher intensities than similar GaN homojunction LEDs. The improved characteristics were attributed to localization of spontaneous r...
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| Publicado no: | Nanotechnology |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7679058/ https://ncbi.nlm.nih.gov/pubmed/30776789 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1361-6528/ab07ed |
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