A carregar...
GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope
Wrap-around gate GaN nanowire MOSFETs using Al(2)O(3) as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV...
Na minha lista:
| Publicado no: | IEEE Electron Device Lett |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5927382/ https://ncbi.nlm.nih.gov/pubmed/29720783 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1109/LED.2017.2785785 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|