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The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion()
The microstructure, polarity and Si distribution in AlN/GaN layers grown by plasma assisted molecular beam epitaxy (PAMBE) on Si(111) was assessed by scanning transmission electron microscopy (STEM). Samples grown under both metal- and nitrogen-rich conditions contained defects at the AlN/Si interfa...
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| Vydáno v: | Jpn J Appl Phys (2008) |
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| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6605072/ https://ncbi.nlm.nih.gov/pubmed/31276121 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.7567/1347-4065/ab1124 |
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