Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Lignende værker

• AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
  af: Tamura, Yosuke, et al.
  Udgivet: (2015)
• Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
  af: Zhong, Aihua, et al.
  Udgivet: (2018)
• Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
  af: Wang, Yongjin, et al.
  Udgivet: (2011)
• Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
  af: Yu, Ing-Song, et al.
  Udgivet: (2014)
• Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
  af: Wang Yongjin, et al.
  Udgivet: (2011-01-01)