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Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 t...

詳細記述

保存先:
書誌詳細
主要な著者: Zhong, Aihua, Hane, Kazuhiro
フォーマット: Artigo
言語:Inglês
出版事項: Springer 2012
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC3564710/
https://ncbi.nlm.nih.gov/pubmed/23270331
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-686
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