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Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si s...
Gorde:
| Argitaratua izan da: | Nanoscale Res Lett |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Springer
2014
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4275119/ https://ncbi.nlm.nih.gov/pubmed/25593560 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-682 |
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