Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si s...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yayımlandı:Nanoscale Res Lett
Asıl Yazarlar: Yu, Ing-Song, Chang, Chun-Pu, Yang, Chung-Pei, Lin, Chun-Ting, Ma, Yuan-Ron, Chen, Chun-Chi
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer 2014
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4275119/
https://ncbi.nlm.nih.gov/pubmed/25593560
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-682
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!

Benzer Materyaller