Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth par...

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Pubblicato in:Beilstein J Nanotechnol
Autori principali: Bolshakov, Alexey D, Mozharov, Alexey M, Sapunov, Georgiy A, Shtrom, Igor V, Sibirev, Nickolay V, Fedorov, Vladimir V, Ubyivovk, Evgeniy V, Tchernycheva, Maria, Cirlin, George E, Mukhin, Ivan S
Natura: Artigo
Lingua:Inglês
Pubblicazione: Beilstein-Institut 2018
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Full Research Paper
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5789400/
https://ncbi.nlm.nih.gov/pubmed/29441260
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.9.17
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