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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiN(x) layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3576259/ https://ncbi.nlm.nih.gov/pubmed/23391377 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-61 |
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