Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridi...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2020
Assuntos:
Communications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7610270/
https://ncbi.nlm.nih.gov/pubmed/33173724
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202000917
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