Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridi...

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Bibliografiska uppgifter
I publikationen:Adv Sci (Weinh)
Huvudupphovsmän: Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Materialtyp: Artigo
Språk:Inglês
Publicerad: John Wiley and Sons Inc. 2020
Ämnen:
Communications
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC7610270/
https://ncbi.nlm.nih.gov/pubmed/33173724
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202000917
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