Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In(x)Ga(1−x)N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in th...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Ma, Dingyu, Rong, Xin, Zheng, Xiantong, Wang, Weiying, Wang, Ping, Schulz, Tobias, Albrecht, Martin, Metzner, Sebastian, Müller, Mathias, August, Olga, Bertram, Frank, Christen, Jürgen, Jin, Peng, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2017
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5394418/
https://ncbi.nlm.nih.gov/pubmed/28417975
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep46420
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars