High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the sma...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Adv Sci (Weinh)
Autors principals: Wang, Tao, Wang, Xinqiang, Chen, Zhaoying, Sun, Xiaoxiao, Wang, Ping, Zheng, Xiantong, Rong, Xin, Yang, Liuyun, Guo, Weiwei, Wang, Ding, Cheng, Jianpeng, Lin, Xi, Li, Peng, Li, Jun, He, Xin, Zhang, Qiang, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Ge, Weikun, Zhang, Xixiang, Shen, Bo
Format: Artigo
Idioma:Inglês
Publicat: John Wiley and Sons Inc. 2018
Matèries:
Communications
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6145405/
https://ncbi.nlm.nih.gov/pubmed/30250812
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201800844
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars