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High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the sma...
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| Publicat a: | Adv Sci (Weinh) |
|---|---|
| Autors principals: | , , , , , , , , , , , , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
John Wiley and Sons Inc.
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6145405/ https://ncbi.nlm.nih.gov/pubmed/30250812 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201800844 |
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