High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the sma...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: Wang, Tao, Wang, Xinqiang, Chen, Zhaoying, Sun, Xiaoxiao, Wang, Ping, Zheng, Xiantong, Rong, Xin, Yang, Liuyun, Guo, Weiwei, Wang, Ding, Cheng, Jianpeng, Lin, Xi, Li, Peng, Li, Jun, He, Xin, Zhang, Qiang, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Ge, Weikun, Zhang, Xixiang, Shen, Bo
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2018
Assuntos:
Communications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6145405/
https://ncbi.nlm.nih.gov/pubmed/30250812
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201800844
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados