Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridi...

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Salvato in:
Dettagli Bibliografici
Pubblicato in:Adv Sci (Weinh)
Autori principali: Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Natura: Artigo
Lingua:Inglês
Pubblicazione: John Wiley and Sons Inc. 2020
Soggetti:
Communications
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC7610270/
https://ncbi.nlm.nih.gov/pubmed/33173724
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202000917
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