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Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N(2) ambient for 20 min to increase its transparency as well as to activate...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385135/ https://ncbi.nlm.nih.gov/pubmed/25852381 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0792-8 |
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