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Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy

In this paper, the formation of Ga droplets on photo-lithographically patterned GaAs (100) and the control of the size and density of Ga droplets by droplet epitaxy using molecular beam epitaxy are demonstrated. In extension of our previous result from the journal Physical Status Solidi A, volume 20...

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Bibliographic Details
Main Authors: Li, Ming-Yu, Hirono, Yusuke, Koukourinkova, Sabina D, Sui, Mao, Song, Sangmin, Kim, Eun-Soo, Lee, Jihoon, Salamo, Gregory J
Format: Artigo
Language:Inglês
Published: Springer 2012
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Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC3506476/
https://ncbi.nlm.nih.gov/pubmed/23033893
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-550
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