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Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
In this paper, the formation of Ga droplets on photo-lithographically patterned GaAs (100) and the control of the size and density of Ga droplets by droplet epitaxy using molecular beam epitaxy are demonstrated. In extension of our previous result from the journal Physical Status Solidi A, volume 20...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2012
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3506476/ https://ncbi.nlm.nih.gov/pubmed/23033893 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-550 |
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