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Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Zhong, Aihua, Fan, Ping, Zhong, Yuanting, Zhang, Dongping, Li, Fu, Luo, Jingting, Xie, Yizhu, Hane, Kazuhiro
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5811422/
https://ncbi.nlm.nih.gov/pubmed/29442172
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2461-1
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