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GaN nanorods grown on Si (111) substrates and exciton localization
We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2011
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3212230/ https://ncbi.nlm.nih.gov/pubmed/21711583 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-81 |
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