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Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes
The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off cur...
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| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7579660/ https://ncbi.nlm.nih.gov/pubmed/33003505 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13194335 |
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