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Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors
In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by anneal...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7867292/ https://ncbi.nlm.nih.gov/pubmed/33540719 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14030683 |
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