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Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC
It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7998277/ https://ncbi.nlm.nih.gov/pubmed/33800338 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030283 |
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