Carregant...
Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC
It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio...
Guardat en:
| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2021
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7998277/ https://ncbi.nlm.nih.gov/pubmed/33800338 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030283 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|