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Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasibility, a crystalline AlN film with a root-mean-squ...
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| Udgivet i: | Micromachines (Basel) |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6843128/ https://ncbi.nlm.nih.gov/pubmed/31547592 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10100635 |
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