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Strain-enhanced high Q-factor GaN micro-electromechanical resonator
We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5) at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increase...
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| Publicado en: | Sci Technol Adv Mater |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Taylor & Francis
2020
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476523/ https://ncbi.nlm.nih.gov/pubmed/32939176 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2020.1792257 |
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