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Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...
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| Publicado no: | Sci Technol Adv Mater |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5101906/ https://ncbi.nlm.nih.gov/pubmed/27877874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2016.1178565 |
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