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Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...
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| 出版年: | Sci Technol Adv Mater |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Taylor & Francis
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5101906/ https://ncbi.nlm.nih.gov/pubmed/27877874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2016.1178565 |
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