Strain-enhanced high Q-factor GaN micro-electromechanical resonator

We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5) at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increase...

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Vydáno v:Sci Technol Adv Mater
Hlavní autoři: Sang, Liwen, Liao, Meiyong, Yang, Xuelin, Sun, Huanying, Zhang, Jie, Sumiya, Masatomo, Shen, Bo
Médium: Artigo
Jazyk:Inglês
Vydáno: Taylor & Francis 2020
Témata:
Optical, Magnetic and Electronic Device Materials
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7476523/
https://ncbi.nlm.nih.gov/pubmed/32939176
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2020.1792257
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