Carregant...
Strain-enhanced high Q-factor GaN micro-electromechanical resonator
We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 10(5) at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increase...
Guardat en:
| Publicat a: | Sci Technol Adv Mater |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Taylor & Francis
2020
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476523/ https://ncbi.nlm.nih.gov/pubmed/32939176 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2020.1792257 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|