A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ([Image: see text] ) a-plane and ([Image: see text] ) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane serie...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Technol Adv Mater
Main Authors: Kundys, Dmytro, Sutherland, Danny, Davies, Matthew J., Oehler, Fabrice, Griffiths, James, Dawson, Philip, Kappers, Menno J., Humphreys, Colin J., Schulz, Stefan, Tang, Fengzai, Oliver, Rachel A.
Formato: Artigo
Idioma:Inglês
Publicado em: Taylor & Francis 2016
Assuntos:
Optical, Magnetic and Electronic Device Materials
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5127259/
https://ncbi.nlm.nih.gov/pubmed/27933113
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2016.1244474
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados