Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicula...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Sarzyński, Marcin, Grzanka, Ewa, Grzanka, Szymon, Targowski, Grzegorz, Czernecki, Robert, Reszka, Anna, Holy, Vaclav, Nitta, Shugo, Liu, Zhibin, Amano, Hiroshi, Leszczyński, Mike
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6719245/
https://ncbi.nlm.nih.gov/pubmed/31416124
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12162583
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