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Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicula...
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| Pubblicato in: | Materials (Basel) |
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| Autori principali: | , , , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6719245/ https://ncbi.nlm.nih.gov/pubmed/31416124 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12162583 |
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