Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicula...

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Vydáno v:Materials (Basel)
Hlavní autoři: Sarzyński, Marcin, Grzanka, Ewa, Grzanka, Szymon, Targowski, Grzegorz, Czernecki, Robert, Reszka, Anna, Holy, Vaclav, Nitta, Shugo, Liu, Zhibin, Amano, Hiroshi, Leszczyński, Mike
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2019
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6719245/
https://ncbi.nlm.nih.gov/pubmed/31416124
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12162583
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