Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Bibliographic Details
Published in:Micromachines (Basel)
Main Authors: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
Format: Artigo
Language:Inglês
Published: MDPI 2020
Subjects:
Review
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC7281217/
https://ncbi.nlm.nih.gov/pubmed/32443764
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11050519
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