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Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...
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| Gepubliceerd in: | Micromachines (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2020
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7281217/ https://ncbi.nlm.nih.gov/pubmed/32443764 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11050519 |
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