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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown...

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Principais autores: Vishwajeet Maurya, Daniel Alquier, Hala El Rammouz, Pedro Fernandes Paes Pinto Rocha, Thomas Kaltsounis, Eugénie Martinez, Florian Bartoli, Eric Frayssinet, Yvon Cordier, Matthew Charles, Julien Buckley
Formato: Artigo
Idioma:Inglês
Publicado em: Elsevier 2025-06-01
coleção:Power Electronic Devices and Components
Assuntos:
Vertical GaN
Schottky diode
Surface preparation
Electrical characterizations
Acesso em linha:http://www.sciencedirect.com/science/article/pii/S2772370425000173
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