Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm², a specific on-resistance <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" di...

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主要な著者:	Mohammed El Amrani, Julien Buckley, Thomas Kaltsounis, David Plaza Arguello, Hala El Rammouz, Daniel Alquier, Matthew Charles
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2024-06-01
シリーズ:	Crystals
主題:	gallium nitride pseudo-vertical p-n diodes localized epitaxy leakage mechanisms
オンライン･アクセス:	https://www.mdpi.com/2073-4352/14/6/553
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