Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction...

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Detaylı Bibliyografya
Asıl Yazarlar:	Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Ram Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	IEEE 2020-01-01
Seri Bilgileri:	IEEE Journal of the Electron Devices Society
Konular:	Schottky barrier diodes GaN-on-GaN regrow leakage interface
Online Erişim:	https://ieeexplore.ieee.org/document/8949530/
Etiketler:	Etiketle Etiket eklenmemiş, İlk siz ekleyin!

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

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