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Floating GaN whispering gallery mode micro-ring lasing with Burstein–Moss effect
A floating GaN micro-ring is fabricated by standard semiconductor technology. Under pump power conditions, ultraviolet lasing with a quality factor of 3600 is obtained. Resonant mode analysis indicates that the lasing spectra contain two types of whispering gallery modes and one type of Fabry–Perót...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2020-10-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0015222 |
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