Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to over...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Celano, Umberto, Gomez, Andres, Piedimonte, Paola, Neumayer, Sabine, Collins, Liam, Popovici, Mihaela, Florent, Karine, McMitchell, Sean R. C., Favia, Paola, Drijbooms, Chris, Bender, Hugo, Paredis, Kristof, Di Piazza, Luca, Jesse, Stephen, Van Houdt, Jan, van der Heide, Paul
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7466465/
https://ncbi.nlm.nih.gov/pubmed/32796703
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10081576
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados