Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications

In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed syste...

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Detalhes bibliográficos

Principais autores:	Mengxuan Yang, Kaifeng Wang, Bocheng Yu, Zhiyuan Fu, Chang Su, Qianqian Huang, Ru Huang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2025-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	FeRAM HZO and ZrO₂
Acesso em linha:	https://ieeexplore.ieee.org/document/10763514/
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