Enhanced polarization and reliability of hafnia-based ferroelectrics with 0.1 nm AlOx insertion layer
HfO2-based ferroelectrics have emerged as promising candidates for next-generation memory applications due to their superior scalability and CMOS compatibility. However, the inherent trade-off between polarization characteristics and switching reliability remains a critical challenge. This study pre...
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| Autors principals: | , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2026-01-01
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| Col·lecció: | Journal of Materiomics |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2352847825000942 |
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