Enhanced polarization and reliability of hafnia-based ferroelectrics with 0.1 nm AlOx insertion layer

HfO2-based ferroelectrics have emerged as promising candidates for next-generation memory applications due to their superior scalability and CMOS compatibility. However, the inherent trade-off between polarization characteristics and switching reliability remains a critical challenge. This study pre...

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Главные авторы:	Xin Liu, Junfeng Zheng, Kunhao Chen, Dandan Qu, Jiyang Wu, Ruiqiang Tao, Zhen Fan, Jiyan Dai, Junming Liu, Xubing Lu
Формат:	Artigo
Язык:	Inglês
Опубликовано:	Elsevier 2026-01-01
Серии:	Journal of Materiomics
Предметы:	HfO2-Based ferroelectric AlOx insertion layer Grain size Oxygen vacancy Reliability
Online-ссылка:	http://www.sciencedirect.com/science/article/pii/S2352847825000942
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