Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects
Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacit...
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| Auteurs principaux: | , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Wiley-VCH
2024-03-01
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| Collection: | Advanced Electronic Materials |
| Sujets: | |
| Accès en ligne: | https://doi.org/10.1002/aelm.202300509 |
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