Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs
Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Wiley-VCH
2024-01-01
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| シリーズ: | Advanced Electronic Materials |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1002/aelm.202300511 |
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