Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs

Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to...

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Hlavní autoři:	Hyeon Jun Hwang, Seung Mo Kim, Byoung Hun Lee
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2024-01-01
Edice:	Advanced Electronic Materials
Témata:	domain switch ferroelectric Hf0.5Zr0.5O2, graphene FET multi‐switch pulsed I–V
On-line přístup:	https://doi.org/10.1002/aelm.202300511
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