Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Abstract Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes. However, the impact of electrodes on the ferroelectric properti...

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Detalhes bibliográficos

Principais autores:	Kuan Liu, Kai Liu, Xingchang Zhang, Feng Jin, Jie Fang, Enda Hua, Huan Ye, Jinfeng Zhang, Zhengguo Liang, Qiming Lv, Wenbin Wu, Chao Ma, Lingfei Wang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2024-10-01
coleção:	Advanced Electronic Materials
Assuntos:	epitaxial thin films ferroelectric domains Hf0.5Zr0.5O2 rhombohedral phase top electrodes
Acesso em linha:	https://doi.org/10.1002/aelm.202400136
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