Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects

Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacit...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Tingfeng Song, Panagiotis Koutsogiannis, César Magén, José A. Pardo, Florencio Sánchez, Ignasi Fina
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2024-03-01
Sarja:	Advanced Electronic Materials
Aiheet:	endurance epitaxial HfO2 ferroelectric hafnia HZO interface layer nanolaminates
Linkit:	https://doi.org/10.1002/aelm.202300509
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