Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to over...

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Principais autores:	Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2020-08-01
סדרה:	Nanomaterials
נושאים:	HfO<sub>2</sub>-based ferroelectrics Si-doped HfO<sub>2</sub> binary oxide ferroelectrics atomic force microscopy band-excitation piezoresponse force microscopy
גישה מקוונת:	https://www.mdpi.com/2079-4991/10/8/1576
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!