Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to over...

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Auteurs principaux:	Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
Format:	Artigo
Langue:	Inglês
Publié:	MDPI AG 2020-08-01
Collection:	Nanomaterials
Sujets:	HfO<sub>2</sub>-based ferroelectrics Si-doped HfO<sub>2</sub> binary oxide ferroelectrics atomic force microscopy band-excitation piezoresponse force microscopy
Accès en ligne:	https://www.mdpi.com/2079-4991/10/8/1576
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