Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity

Ferroelectric thin films based on HfO2 have garnered increasing attention worldwide, primarily due to their remarkable compatibility with silicon and scalability, in contrast to traditional perovskite-structured ferroelectric materials. Nonetheless, significant challenges remain in their widespread...

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Detalhes bibliográficos

Principais autores:	Fei Yan, Ke Cao, Yang Chen, Jiajia Liao, Min Liao, Yichun Zhou
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Tsinghua University Press 2024-07-01
coleção:	Journal of Advanced Ceramics
Assuntos:	ferroelectric capacitors thin films ferroelectricity hafnium zirconium oxide
Acesso em linha:	https://www.sciopen.com/article/10.26599/JAC.2024.9220916
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