Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to achieve the thickness independent of the HSO and HZO...

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Príomhchruthaitheoirí:	Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng
Formáid:	Artigo
Teanga:	Inglês
Foilsithe / Cruthaithe:	MDPI AG 2021-08-01
Sraith:	Electronic Materials
Ábhair:	ferroelectric hafnium oxide laminate FeFET synaptic device
Rochtain ar líne:	https://www.mdpi.com/2673-3978/2/3/24
Clibeanna:	Cuir clib leis Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!