Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity
Ferroelectric thin films based on HfO2 have garnered increasing attention worldwide, primarily due to their remarkable compatibility with silicon and scalability, in contrast to traditional perovskite-structured ferroelectric materials. Nonetheless, significant challenges remain in their widespread...
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| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Tsinghua University Press
2024-07-01
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| Seri Bilgileri: | Journal of Advanced Ceramics |
| Konular: | |
| Online Erişim: | https://www.sciopen.com/article/10.26599/JAC.2024.9220916 |
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